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China Power Device Comprehensive Test System - China Supplier
China Power Device Comprehensive Test System - China Supplier China Power Device Comprehensive Test System - China Supplier China Power Device Comprehensive Test System - China Supplier China Power Device Comprehensive Test System - China Supplier China Power Device Comprehensive Test System - China Supplier

Power Device Comprehensive Test System

Price:1
Industry Category: Others
Product Category:
Brand: 華科智源
Spec:


Contact Info
  • Add:深圳市寶安區(qū)西鄉(xiāng)街道智慧創(chuàng)新中心, Zip: 518102
  • Contact: 陳先生
  • Tel:13008867918
  • Email:chensl@hustec.cn

Other Products

Description
Additional Information

HUSTEC Huake Zhiyuan

Power Device Comprehensive Testing System


I: Main Features of the Static Parameter Testing System

Huake Zhiyuan's electrical parameter tester can be used for testing IGBTs in various package forms, and can also measure the V-I characteristics of high-power diodes, IGBT modules, high-power IGBTs, high-power bipolar transistors, MOSFETs, and other devices. It tests various power devices up to 600A (expandable to 2000A) and 5000V, widely used in rail transportation, electric vehicles, wind power generation, inverters, and welding machine industries for IGBT incoming inspection selection and failure analysis. The equipment can also be used for online maintenance in industries such as inverters, wind power, rail transportation, and welding machines, without the need to remove the device from the circuit board for separate testing. It enables online IGBT detection, making testing convenient and the process simple. Parameters can be set directly in the test host for testing, or automatic testing can be performed after programming the host via software control. The static parameter testing of IGBTs is completed through computer operation.

Static Parameter Testing System Test Parameters:

ICES Collector-Emitter Leakage Current

IGESF Forward Gate Leakage Current

IGESR Reverse Gate Leakage Current

BVCES Collector-Emitter Breakdown Voltage

VGETH Gate-Emitter Threshold Voltage

VCESAT Collector-Emitter Saturation Voltage

ICON On-State Electrode Current

VGEON On-State Gate Voltage

VF Diode Forward Voltage Drop

The entire testing process is automated. The computer software includes a database management and query function, and can generate test curves for easy operation and use.

II: Static Parameter Testing System Application Scope

A: IGBT discrete devices and modules,

B: High-power MOSFETs (Mosfet)

C: High-power diodes

D: Standard low-resistance resistors

E: Screening and online fault detection in industries such as rail transportation, wind power generation, new energy vehicles, inverters, and welding machines

III. Static Parameter Testing System Features:

A: Measures various IGBTs and MOSFETs

B: Pulse current 1200A, voltage 5KV, wide testing range;

C: Pulse width 50uS~300uS

D: Vce measurement accuracy 2mV

E: Vce measurement range >10V

F: Computer graphical display interface

G: Intelligent protection for the measured device

H: Upper computer with database function

I: Internal diode voltage drop of MOSFET/IGBT

J: Tests all static parameters of IGBT in one go

Generates test curves (IV curves visually display IGBT characteristics, enabling failure analysis and fault localization)

L: Allows comparison of different curves to observe the curve status of products from the same batch or compare curves of the same specification parameters from different manufacturers;

No.

Test Item

Description

Measurement Range

Resolution

Accuracy

1

VF

Diode Forward Voltage Drop

0~20V

1mV

±1%,±1mV

2

IF

Diode Forward Current

0~1200A

≤200A, 0.1A

≤200A, ±1%±0.1A

3

>200A, 1A

>200A, ±1%

4

Vces

Collector-Emitter Voltage

0~5000V

1V

±1%,±1V

5

Ic

On-State Collector Current

0~1200A

≤200A, 0.1A

≤200A, ±1%±0.1A

6

>200A, 1A

>200A, ±1%

7

Ices

Collector-Emitter Leakage Current

0~50mA

1nA

±1%,±10μA

8

Vgeth

Gate-Emitter Threshold Voltage

0~20V

1mV

±1%,±1mV

9

Vcesat

Collector-Emitter Saturation Voltage

0~20V

1mV

±1%,±1mV

10

Igesf

Forward Gate Leakage Current

0~10uA

1nA

±2%,±1nA

11

Igesr

Reverse Gate Leakage Current

12

Vges

Gate-Emitter Voltage

0~40V

1mV

±1%,±1mV

Huake Zhiyuan's Static Parameter Testing System is an intelligent testing system developed specifically for various static parameters of IGBTs. It features a high degree of automation (automatically operates according to the program set by the operator), records test results via computer, which can be stored in text format, and offers flexible testing methods (capable of testing discrete devices as well as single-unit and multi-unit modules). It is safe and stable (with real-time monitoring of the equipment's working status and interlocking with hardware), includes safety protection functions, and ensures fast and convenient testing.


Industry Category Others
Product Category
Brand: 華科智源
Spec:
Stock:
Origin: China / Guangdong / Shenshi
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