This SiC substrate company secured hundreds of millions in Series D funding, with the third-generation semiconductor materials market on the verge of explosion!

Ion implantation technology has also been a rapidly developing and widely applied material surface modification technique internationally over the past 30 years. When an ion beam with energy levels around 100 keV is incident on a material, a series of physical and chemical interactions occur between the ion beam and the atoms or molecules within the material. During this process, due to the ion beam, exposing metal components to ion implantation equipment can result in high wear and tear, making it necessary to use corresponding graphite parts as isolation shields.

Hongjun New Materials uses SGL graphite, not only providing graphite isolation shields for various ion implanters but also offering high-purity graphite electrodes and ion sources in various specifications with high corrosion resistance. These graphite products boast the advantages of being corrosion-resistant and high in purity.

To meet the diverse needs of customers, Hongjun New Materials can also use high-purity graphite and precision machining methods tailored to the specific規(guī)格 requirements of clients, ensuring the precision demands of graphite components are met.